Crystalline quality of 3C-SiC formed by high-fluence C⁺-implanted Si

• المؤلفون الرئيسيون: S. Intarasiri, A. Hallén, J. Lu, J. Jensen, L. D. Yu, K. Bertilsson, M. Wolborski, S. Singkarat, G. Possnert
• التنسيق: دورية
• منشور في: 2018
• الموضوعات: Materials Science
• الوصول للمادة أونلاين: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=33847316578&origin=inward; http://cmuir.cmu.ac.th/jspui/handle/6653943832/61200
• المؤسسة: Chiang Mai University

Carbon ions at 40 keV were implanted into (1 0 0) high-purity p-type silicon wafers at 400 °C to a fluence of 6.5 × 1017ions/cm2. Subsequent thermal annealing of the implanted samples was performed in a diffusion furnace at atmospheric pressure with inert nitrogen ambient at 1100 °C. Time-of-flight...