Activation energy of the growth of ion-beam-synthesized nano-crystalline 3C-SiC
In this experiment, carbon ions at 40 keV were implanted into (1 0 0) high-purity p-type silicon wafers at 400 °C to a fluence of 6.5 × 1017ions/cm2. Subsequent thermal annealing of the implanted samples was performed in a vacuum furnace at 800-1000 °C. Glancing incidence X-ray diffraction (GIXRD) w...
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| Main Authors: | , , , , , , |
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| Format: | Journal |
| Published: |
2018
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| Subjects: | |
| Online Access: | https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=33947691532&origin=inward http://cmuir.cmu.ac.th/jspui/handle/6653943832/61392 |
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| Institution: | Chiang Mai University |