Activation energy of the growth of ion-beam-synthesized nano-crystalline 3C-SiC

• المؤلفون الرئيسيون: S. Intarasiri, S. Dangtip, A. Hallén, J. Jensen, L. D. Yu, G. Possnert, S. Singkarat
• التنسيق: دورية
• منشور في: 2018
• الموضوعات: Physics and Astronomy
• الوصول للمادة أونلاين: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=33947691532&origin=inward; http://cmuir.cmu.ac.th/jspui/handle/6653943832/61392
• المؤسسة: Chiang Mai University

In this experiment, carbon ions at 40 keV were implanted into (1 0 0) high-purity p-type silicon wafers at 400 °C to a fluence of 6.5 × 1017ions/cm2. Subsequent thermal annealing of the implanted samples was performed in a vacuum furnace at 800-1000 °C. Glancing incidence X-ray diffraction (GIXRD) w...