Crystalline quality of 3C-SiC formed by high-fluence C<sup>+</sup>-implanted Si
Carbon ions at 40 keV were implanted into (1 0 0) high-purity p-type silicon wafers at 400 °C to a fluence of 6.5 × 1017ions/cm2. Subsequent thermal annealing of the implanted samples was performed in a diffusion furnace at atmospheric pressure with inert nitrogen ambient at 1100 °C. Time-of-flight...
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| Main Authors: | , , , , , , , , |
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| 格式: | 雜誌 |
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2018
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| 在線閱讀: | https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=33847316578&origin=inward http://cmuir.cmu.ac.th/jspui/handle/6653943832/61200 |
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