Characterization of the crystalline quality of β-SiC formed by ion beam synthesis
The ion beam synthesis (IBS) technique is applied to form crystalline silicon carbide (SiC) for future optoelectronics applications. Carbon ions at 80 and 40 keV were implanted into (1 0 0) high-purity p-type silicon wafers at room temperature and 400 °C, respectively, to doses in excess of 1017ions...
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| Main Authors: | , , , , , |
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| 格式: | 雜誌 |
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2018
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| 在線閱讀: | https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=33745827772&origin=inward http://cmuir.cmu.ac.th/jspui/handle/6653943832/61939 |
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| 機構: | Chiang Mai University |