Characterization of the crystalline quality of β-SiC formed by ion beam synthesis

• المؤلفون الرئيسيون: S. Intarasiri, A. Hallén, T. Kamwanna, L. D. Yu, G. Possnert, S. Singkarat
• التنسيق: دورية
• منشور في: 2018
• الموضوعات: Physics and Astronomy
• الوصول للمادة أونلاين: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=33745827772&origin=inward; http://cmuir.cmu.ac.th/jspui/handle/6653943832/61939

The ion beam synthesis (IBS) technique is applied to form crystalline silicon carbide (SiC) for future optoelectronics applications. Carbon ions at 80 and 40 keV were implanted into (1 0 0) high-purity p-type silicon wafers at room temperature and 400 °C, respectively, to doses in excess of 1017ions...