RBS and ERDA determinations of depth distributions of high-dose carbon ions implanted in silicon for silicon-carbide synthesis study

• Main Authors: S. Intarasiri, T. Kamwanna, A. Hallén, L. D. Yu, M. S. Janson, C. Thongleum, G. Possnert, S. Singkarat
• Format: Journal
• Published: 2018
• Subjects: Physics and Astronomy
• Online Access: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=33745966076&origin=inward; http://cmuir.cmu.ac.th/jspui/handle/6653943832/61940
• Institution: Chiang Mai University

For ion beam synthesis of silicon carbide (SiC), a knowledge of the depth distribution of implanted carbon ions in silicon is crucial for successful development. Based on its simplicity and availability, we selected Rutherford backscattering spectrometry (RBS) as an analysis technique for this purpo...