RBS and ERDA determinations of depth distributions of high-dose carbon ions implanted in silicon for silicon-carbide synthesis study

• المؤلفون الرئيسيون: S. Intarasiri, T. Kamwanna, A. Hallén, L. D. Yu, M. S. Janson, C. Thongleum, G. Possnert, S. Singkarat
• التنسيق: دورية
• منشور في: 2018
• الموضوعات: Physics and Astronomy
• الوصول للمادة أونلاين: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=33745966076&origin=inward; http://cmuir.cmu.ac.th/jspui/handle/6653943832/61940

For ion beam synthesis of silicon carbide (SiC), a knowledge of the depth distribution of implanted carbon ions in silicon is crucial for successful development. Based on its simplicity and availability, we selected Rutherford backscattering spectrometry (RBS) as an analysis technique for this purpo...