RBS and ERDA determinations of depth distributions of high-dose carbon ions implanted in silicon for silicon-carbide synthesis study
For ion beam synthesis of silicon carbide (SiC), a knowledge of the depth distribution of implanted carbon ions in silicon is crucial for successful development. Based on its simplicity and availability, we selected Rutherford backscattering spectrometry (RBS) as an analysis technique for this purpo...
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| Main Authors: | , , , , , , , |
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| 格式: | 雜誌 |
| 出版: |
2018
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| 在線閱讀: | https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=33745966076&origin=inward http://cmuir.cmu.ac.th/jspui/handle/6653943832/61940 |
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| 機構: | Chiang Mai University |