High-energy heavy ion beam annealed ion-implantation-synthesized SiC nanocrystallites and photoluminescence

• المؤلفون الرئيسيون: Khamsuwan J., Intarasiri S., Kirkby K., Chu P.K., Yu L.D.
• التنسيق: Conference or Workshop Item
• اللغة: English
• منشور في: 2014
• الوصول للمادة أونلاين: http://www.scopus.com/inward/record.url?eid=2-s2.0-77951657126&partnerID=40&md5=061cce3cc7728f6efe292438eb21f918; http://cmuir.cmu.ac.th/handle/6653943832/6274

This work explored a novel way to synthesize silicon carbide (SiC). Carbon ions at tens of keV were first implanted in single crystalline silicon wafers at elevated temperature, followed by irradiation using heavy xenon ion beams at high energy of 4 MeV with fluences of 5 × 1013 and 1 × 1014 ions/cm...