Storage Reliability and Temperature Increment with Tilted Free Layer Magnetization in Nanopillars for Spin Torque Magnetic Memory

• المؤلفون الرئيسيون: Chayada Surawanitkun", Arkom Kaewrawang, Roong Sivaratana, Anan Kruesubthaworn, Apirat Siritaratiwat
• اللغة: English
• منشور في: Science Faculty of Chiang Mai University 2019
• الموضوعات: Current induced magnetization switching; STT magnetic random access memory; Joule heating; Magnetic tunnel junction
• الوصول للمادة أونلاين: http://it.science.cmu.ac.th/ejournal/dl.php?journal_id=5770; http://cmuir.cmu.ac.th/jspui/handle/6653943832/66817

Recently, the temperature increment in magnetic tunnel junction (MTJ) nanopillars with relevant current induced magnetization switching for spin transfer torque magnetic random access memory (STT-MRAM) has become interesting because it affects the reliability of devices. In this work, the magnetic s...