Analysis of high-power devices using proton beam induced currents

由 Zmeck, M., Osipowicz, T., Watt, F., Niedernostheide, F., Schulze, H.-J., Fiege, G.B.M., Balk, L.
出版 2014

Failure analysis of integrated devices by Scanning Thermal Microscopy (SThM)

由 Fiege, G.B.M., Feige, V., Phang, J.C.H., Maywald, M., Görlich, S., Balk, L.J.
出版 2014

Front- and backside investigations of thermal and electronic properties of semiconducting devices

由 Fiege, G.B.M., Schade, W., Palaniappan, M., Ng, V., Phang, J.C.H., Balk, L.J.
出版 2014

Front- and backside investigations of thermal and electronic properties of semiconducting devices

由 Fiege, G.B.M., Schade, W., Palaniappan, M., Ng, V., Phang, J.C.H., Balk, L.J.
出版 2014

Correlation of Electronic and Thermal Properties of Short Channel nMOSFETS

由 Palaniappan, M., Ng, V., Heiderhoff, R., Phang, J.C.H., Fiege, G.B.M., Balk, L.J.
出版 2014

Characterization of MOS Devices by Scanning Thermal Microscopy (SThM)

由 Lee, T.H., Fiege, G.B.M., Altes, A., Zimmermann, G., Ng, V., Heiderhoff, R., Phang, J.C.H., Balk, L.J.
出版 2014