IBIC analysis of high-power devices

by Osipowicz, T., Zmeck, M., Watt, F., Fiege, G., Balk, L., Niedernostheide, F., Schulze, H.-J.
Published 2014

Analysis of high-power devices using proton beam induced currents

by Zmeck, M., Osipowicz, T., Watt, F., Niedernostheide, F., Schulze, H.-J., Fiege, G.B.M., Balk, L.
Published 2014

Modeling of deep buried structures in high-power devices based on proton beam induced charge microscopy

by Zmeck, M., Balk, L., Osipowicz, T., Watt, F., Phang, J., Khambadkone, A., Niedernostheide, F.-J., Schulze, H.-J.
Published 2014

Ion beam induced charge microscopy studies of power diodes

by Zmeck, M., Balk, L.J., Osipowicz, T., Watt, F., Phang, J.C.H., Khambadkone, A.M., Niedernostheide, F.-J., Schulze, H.-J.
Published 2014

Analysis of high-power devices using proton beam induced charge microscopy

by Zmeck, M., Phang, J., Bettiol, A., Osipowicz, T., Watt, F., Balk, L., Niedernostheide, F.-J., Schulze, H.-J., Falck, E., Barthelmess, R.
Published 2014

Analysis of E-field distributions within high-power devices using IBIC microscopy

by Zmeck, M., Balk, L.J., Heiderhoff, R., Osipowicz, T., Watt, F., Phang, J.C.H., Khambadkone, A.M., Niedernostheide, F.-J., Schulze, H.-J.
Published 2014

Analysis of premature breakdown in high-power devices using IBIC microscopy

by Zmeck, M., Balk, L.J., Pugatschow, A., Niedernostheide, F.-J., Schulze, H.-J., Osipowicz, T., Watt, F., Phang, J.C.H., Khambadkone, A.M.
Published 2014