Flexible TiN/Ge photodetectors with enhanced responsivity via localized surface plasmon resonance and strain modulation

بواسطة Kim, You Jin, An, Shu, Liao, Yikai, Huang, Po-Rei, Son, Bongkwon, Tan, Chuan Seng, Chang, Guo-En, Kim, Munho
منشور في 2023

Single-crystalline Ge₁₋ₓSnₓ/Si p–n heterojunction photodiodes with Sn compositions up to 10%

بواسطة An, Shu, Huang, Yi-Chiau, Wu, Chen-Ying, Huang, Po-Rei, Chang, Guo-En, Lai, Junyu, Seo, Jung-Hun, Kim, Munho
منشور في 2023

Transfer-printing-enabled GeSn flexible resonant-cavity-enhanced photodetectors with strain-amplified mid-infrared optical responses

بواسطة Tai, Yeh-Chen, An, Shu, Huang, Po-Rei, Jheng, Yue-Tong, Lee, Kuo-Chih, Cheng, Hung-Hsiang, Kim, Munho, Chang, Guo-En
منشور في 2023

GaAs/GeSn/Ge n-i-p diodes and light emitting diodes formed via grafting

بواسطة Zhou, Jie, Wang, Haibo, Huang, Po Rei, Xu, Shengqiang, Liu, Yang, Gong, Jiarui, Shen, Jianping, Vicent, Daniel, Haessly, Samuel, Abrand, Alireza, Mohseni, Parsian K., Kim, Munho, Yu, Shui-Qing, Chang, Guo-En, Gong, Xiao, Ma, Zhenqiang
منشور في 2024