Reduction of current collapse in AlGaN/GaN MISHEMT with bilayer SiN/Al2O3 dielectric gate stack

由 Anand, M. J., Ng, G. I., Vicknesh, S., Arulkumaran, Subramaniam, Ranjan, K.
出版 2014

High vertical breakdown strength in with low specific on-resistance AlGaN/AlN/GaN HEMTs on silicon

由 Vicknesh, S., Ng, G. I., Liu, Z. H., Selvaraj, S. L., Egawa, T., Arulkumaran, Subramaniam
出版 2014

High-frequency microwave noise characteristics of InAlN/GaN high-electron mobility transistors on Si (111) substrate

由 Arulkumaran, Subramaniam, Ranjan, K., Ng, G. I., Manoj Kumar, C. M., Vicknesh, S., Dolmanan, S. B., Tripathy, S.
出版 2015

Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy

由 Ravikiran, L., Dharmarasu, N., Radhakrishnan, K., Agrawal, M., Yiding, Lin, Arulkumaran, S., Vicknesh, S., Ng, G. I.
出版 2015

Method for determining the source and drain resistance of double heterojunction δ-doped PHEMTs

由 Rao, R.V.V.V.J., Joe, J., Chia, Y.W.M., Ang, K.S., Ng, G.I.
出版 2014

A novel method for the De-embedding of S-parameters of double heterojunction δ-doped PHEMTs - Modeling and measurements

由 Rao, R.V.V.V.J., Joe, J., Chia, Y.W.M., Ang, K.S., Wang, H., Ng, G.I.
出版 2014

Experimental determination of on and off state small-signal equivalent circuit of δ-doped PHEMTs

由 Rao, Rapeta V.V.V.J., Joe, J., Chia, Y.W.Michael, Ang, K.S., Wang, H., Ng, G.I.
出版 2014

Electron velocity of 6 × 107 cm/s at 300 K in stress engineered InAlN/GaN nano-channel high-electron-mobility transistors

由 Arulkumaran, S., Ng, G. I., Manoj Kumar, C. M., Ranjan, K., Teo, K. L., Shoron, O. F., Rajan, S., Bin Dolmanan, S., Tripathy, S.
出版 2015

Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111)

由 Anand, M. J., Ng, G. I., Arulkumaran, S., Manoj Kumar, C. M., Ranjan, K., Vicknesh, S., Foo, S. C., Syamal, B., Zhou, X.
出版 2015