Effect of growth temperature on the epitaxy strain relaxation and the tilt of InxAl1-x As graded layer grown by solid-source molecular beam epitaxy

by Loke, W.K., Tan, K.H., Wicaksono, S., Yoon, S.F., Owen, M.H.S., Yeo, Y.-C.
Published 2014

Crystal structure and epitaxial relationship of Ni4InGaAs 2 films formed on InGaAs by annealing

by Ivana, Foo, Y.L., Zhang, X., Zhou, Q., Pan, J., Kong, E., Owen, M.H.S., Yeo, Y.-C.
Published 2014

N-channel InGaAs field-effect transistors formed on germanium-on-insulator substrates

by Ivana, Subramanian, S., Owen, M.H.S., Tan, K.H., Loke, W.K., Wicaksono, S., Yoon, S.F., Yeo, Y.-C.
Published 2014

AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 v and a complementary metal-oxide- semiconductor compatible gold-free p...

by Liu, X., Zhan, C., Wai Chan, K., Samuel Owen, M.H., Liu, W., Chi, D.Z., Tan, L.S., Chen, K.J., Yeo, Y.-C.
Published 2014

Band alignment study of lattice-matched InAlP and Ge using x-ray photoelectron spectroscopy

by Owen, M.H.S., Guo, C., Chen, S.-H., Wan, C.-T., Cheng, C.-C., Wu, C.-H., Ko, C.-H., Wann, C.H., Ivana, Zhang, Z., Pan, J.S., Yeo, Y.-C.
Published 2014

High performance Ge CMOS with novel InAlP-passivated channels for future sub-10 nm technology node applications

by Liu, B., Gong, X., Cheng, R., Guo, P., Zhou, Q., Owen, M.H.S., Guo, C., Wang, L., Wang, W., Yang, Y., Yeo, Y.-C., Wan, C.-T., Chen, S.-H., Cheng, C.-C., Lin, Y.-R., Wu, C.-H., Ko, C.-H., Wann, C.H.
Published 2014