SIFAT LISTRIK DAN PENGARUH ANNEALING TERHADAP KONTAK OHM1K LOGAM PERAK PADA FILM TIPIS GALIUM ANTIMONI

The characterization i.V and Hall of the thin films of GaSb have been done. Thin film are grown by MOCVD technique use TMGa and TDMASb precusors. Then metallization of these films by Ag use evaporator. The characterization shown that Ag contact with GaSb has a good ohmic contact and a good electrica...

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Bibliographic Details
Main Author: RUGAYA
Format: Theses
Language:Indonesia
Online Access:https://digilib.itb.ac.id/gdl/view/1676
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Institution: Institut Teknologi Bandung
Language: Indonesia