SIFAT LISTRIK DAN PENGARUH ANNEALING TERHADAP KONTAK OHM1K LOGAM PERAK PADA FILM TIPIS GALIUM ANTIMONI
The characterization i.V and Hall of the thin films of GaSb have been done. Thin film are grown by MOCVD technique use TMGa and TDMASb precusors. Then metallization of these films by Ag use evaporator. The characterization shown that Ag contact with GaSb has a good ohmic contact and a good electrica...
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| Format: | Theses |
| Language: | Indonesia |
| Online Access: | https://digilib.itb.ac.id/gdl/view/1676 |
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| Institution: | Institut Teknologi Bandung |
| Language: | Indonesia |
| Summary: | The characterization i.V and Hall of the thin films of GaSb have been done. Thin film are grown by MOCVD technique use TMGa and TDMASb precusors. Then metallization of these films by Ag use evaporator. The characterization shown that Ag contact with GaSb has a good ohmic contact and a good electrical properties. The transport mechanism on thin films GaSb with high mobility described by the thermionic emission theory. In annealing processes, the films of 200 °C in nitrogen environment can reduce the specific contact. resistant. This study also produces a hypothesis about a special parameter to find the thin films of p-GaSb or n- GaSb undoped with the high mobility. |
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