SIFAT LISTRIK DAN PENGARUH ANNEALING TERHADAP KONTAK OHM1K LOGAM PERAK PADA FILM TIPIS GALIUM ANTIMONI

SIFAT LISTRIK DAN PENGARUH ANNEALING TERHADAP KONTAK OHM1K LOGAM PERAK PADA FILM TIPIS GALIUM ANTIMONI

The characterization i.V and Hall of the thin films of GaSb have been done. Thin film are grown by MOCVD technique use TMGa and TDMASb precusors. Then metallization of these films by Ag use evaporator. The characterization shown that Ag contact with GaSb has a good ohmic contact and a good electrica...

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Main Author: RUGAYA
Format: Theses
Language:Indonesia
Online Access:https://digilib.itb.ac.id/gdl/view/1676
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Institution: Institut Teknologi Bandung
Language: Indonesia
id id-itb.:1676
spelling id-itb.:16762004-11-24T10:25:27ZSIFAT LISTRIK DAN PENGARUH ANNEALING TERHADAP KONTAK OHM1K LOGAM PERAK PADA FILM TIPIS GALIUM ANTIMONI RUGAYA Indonesia Theses INSTITUT TEKNOLOGI BANDUNG https://digilib.itb.ac.id/gdl/view/1676 The characterization i.V and Hall of the thin films of GaSb have been done. Thin film are grown by MOCVD technique use TMGa and TDMASb precusors. Then metallization of these films by Ag use evaporator. The characterization shown that Ag contact with GaSb has a good ohmic contact and a good electrical properties. The transport mechanism on thin films GaSb with high mobility described by the thermionic emission theory. In annealing processes, the films of 200 °C in nitrogen environment can reduce the specific contact. resistant. This study also produces a hypothesis about a special parameter to find the thin films of p-GaSb or n- GaSb undoped with the high mobility. text
institution Institut Teknologi Bandung
building Institut Teknologi Bandung Library
continent Asia
country Indonesia
Indonesia
content_provider Institut Teknologi Bandung
collection Digital ITB
language Indonesia
description The characterization i.V and Hall of the thin films of GaSb have been done. Thin film are grown by MOCVD technique use TMGa and TDMASb precusors. Then metallization of these films by Ag use evaporator. The characterization shown that Ag contact with GaSb has a good ohmic contact and a good electrical properties. The transport mechanism on thin films GaSb with high mobility described by the thermionic emission theory. In annealing processes, the films of 200 °C in nitrogen environment can reduce the specific contact. resistant. This study also produces a hypothesis about a special parameter to find the thin films of p-GaSb or n- GaSb undoped with the high mobility.
format Theses
author RUGAYA
spellingShingle RUGAYA
SIFAT LISTRIK DAN PENGARUH ANNEALING TERHADAP KONTAK OHM1K LOGAM PERAK PADA FILM TIPIS GALIUM ANTIMONI
author_facet RUGAYA
author_sort RUGAYA
title SIFAT LISTRIK DAN PENGARUH ANNEALING TERHADAP KONTAK OHM1K LOGAM PERAK PADA FILM TIPIS GALIUM ANTIMONI
title_short SIFAT LISTRIK DAN PENGARUH ANNEALING TERHADAP KONTAK OHM1K LOGAM PERAK PADA FILM TIPIS GALIUM ANTIMONI
title_full SIFAT LISTRIK DAN PENGARUH ANNEALING TERHADAP KONTAK OHM1K LOGAM PERAK PADA FILM TIPIS GALIUM ANTIMONI
title_fullStr SIFAT LISTRIK DAN PENGARUH ANNEALING TERHADAP KONTAK OHM1K LOGAM PERAK PADA FILM TIPIS GALIUM ANTIMONI
title_full_unstemmed SIFAT LISTRIK DAN PENGARUH ANNEALING TERHADAP KONTAK OHM1K LOGAM PERAK PADA FILM TIPIS GALIUM ANTIMONI
title_sort sifat listrik dan pengaruh annealing terhadap kontak ohm1k logam perak pada film tipis galium antimoni
url https://digilib.itb.ac.id/gdl/view/1676
_version_ 1820663030096068608

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