TEKNIK WAFER BONDING DAN ETSA SELEKTIF DALAM FABRIKASI WAFER SOI
<b>ABSTRACK:</br></b><br /> <p align=\"justify\">Wafer bonding process have been done to support SOI wafer fabrication especially in ELTRAN and SMARTCUT methods, The good quality of wafer bonding was yield by using electrostatic forces (stress >2x105 N/m- )...
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| Format: | Theses |
| Language: | Indonesia |
| Online Access: | https://digilib.itb.ac.id/gdl/view/1692 |
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| Institution: | Institut Teknologi Bandung |
| Language: | Indonesia |
| Summary: | <b>ABSTRACK:</br></b><br />
<p align=\"justify\">Wafer bonding process have been done to support SOI wafer fabrication especially in ELTRAN and SMARTCUT methods, The good quality of wafer bonding was yield by using electrostatic forces (stress >2x105 N/m- ) with carbon electrodes that uses electrical potential around 24 V at 1150 °C. On the other hand wafer bonding process can be done by produce O-H clusters that can be made in H,O,:H,SO 4 (1: 1) mixture and continuing with heating treatment at 1150 °C (stress > 105 Mn- ). Besides, thinning and selective etching are also important process in SOI fabrication. KOH 30% have been chosen to etch silicon layers and yield 2,4 1tm/minute etching rate at 80° C. HF:H2Oz (l:5) mixture have been used to selective etching in porous silicon and give 0.1388 pm/minute etching rate at room temparature and 0.27 pm/minute at 100 °C. |
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