OTOMATISASI SISTEM PENGUKURAN EFEK HALL DAN APLIKASINYA PADA PENENTUAN PARAMETER ELEKTRONIK FILM TIPIS GALIUM NITRIDA
<b>Abstrak:<p align="justify"> <br /> <br /> A fully computerized Hall effect measurement system has been set up for measurement of electronic parameters of semiconductors. The accuracy of the system is less than 1.5% as revealed from accuracy test performed on a...
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| Format: | Theses |
| Language: | Indonesia |
| Online Access: | https://digilib.itb.ac.id/gdl/view/5017 |
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| Institution: | Institut Teknologi Bandung |
| Language: | Indonesia |
| Summary: | <b>Abstrak:<p align="justify"> <br />
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A fully computerized Hall effect measurement system has been set up for measurement of electronic parameters of semiconductors. The accuracy of the system is less than 1.5% as revealed from accuracy test performed on a quad resistor. The system was used for measurement of electronic parameters of thin film GaN grown on sapphire (A12O3) by PEMOCVD technique. It revealed that films grown under condition of growth temperature of 640"C, VaIII ratio of 162.5 and 112.5, have Hall mobility in the range of 156 and 11 cm2/V.s, respectively. The resistivity and concentration are between 10'2-10'3S2cm and 1019-1020cm 3, respectively. The low mobility of the samples indicated that the growth condition need to be adjusted in order that the optimum growth condition are achieved.<p align="justify"> <br />
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