OTOMATISASI SISTEM PENGUKURAN EFEK HALL DAN APLIKASINYA PADA PENENTUAN PARAMETER ELEKTRONIK FILM TIPIS GALIUM NITRIDA

OTOMATISASI SISTEM PENGUKURAN EFEK HALL DAN APLIKASINYA PADA PENENTUAN PARAMETER ELEKTRONIK FILM TIPIS GALIUM NITRIDA

<b>Abstrak:<p align="justify"> <br /> <br /> A fully computerized Hall effect measurement system has been set up for measurement of electronic parameters of semiconductors. The accuracy of the system is less than 1.5% as revealed from accuracy test performed on a...

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Main Author: Setyarsih, Woro
Format: Theses
Language:Indonesia
Online Access:https://digilib.itb.ac.id/gdl/view/5017
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Institution: Institut Teknologi Bandung
Language: Indonesia
id id-itb.:5017
spelling id-itb.:50172006-03-27T12:20:11ZOTOMATISASI SISTEM PENGUKURAN EFEK HALL DAN APLIKASINYA PADA PENENTUAN PARAMETER ELEKTRONIK FILM TIPIS GALIUM NITRIDA Setyarsih, Woro Indonesia Theses INSTITUT TEKNOLOGI BANDUNG https://digilib.itb.ac.id/gdl/view/5017 <b>Abstrak:<p align="justify"> <br /> <br /> A fully computerized Hall effect measurement system has been set up for measurement of electronic parameters of semiconductors. The accuracy of the system is less than 1.5% as revealed from accuracy test performed on a quad resistor. The system was used for measurement of electronic parameters of thin film GaN grown on sapphire (A12O3) by PEMOCVD technique. It revealed that films grown under condition of growth temperature of 640"C, VaIII ratio of 162.5 and 112.5, have Hall mobility in the range of 156 and 11 cm2/V.s, respectively. The resistivity and concentration are between 10'2-10'3S2cm and 1019-1020cm 3, respectively. The low mobility of the samples indicated that the growth condition need to be adjusted in order that the optimum growth condition are achieved.<p align="justify"> <br /> text
institution Institut Teknologi Bandung
building Institut Teknologi Bandung Library
continent Asia
country Indonesia
Indonesia
content_provider Institut Teknologi Bandung
collection Digital ITB
language Indonesia
description <b>Abstrak:<p align="justify"> <br /> <br /> A fully computerized Hall effect measurement system has been set up for measurement of electronic parameters of semiconductors. The accuracy of the system is less than 1.5% as revealed from accuracy test performed on a quad resistor. The system was used for measurement of electronic parameters of thin film GaN grown on sapphire (A12O3) by PEMOCVD technique. It revealed that films grown under condition of growth temperature of 640"C, VaIII ratio of 162.5 and 112.5, have Hall mobility in the range of 156 and 11 cm2/V.s, respectively. The resistivity and concentration are between 10'2-10'3S2cm and 1019-1020cm 3, respectively. The low mobility of the samples indicated that the growth condition need to be adjusted in order that the optimum growth condition are achieved.<p align="justify"> <br />
format Theses
author Setyarsih, Woro
spellingShingle Setyarsih, Woro
OTOMATISASI SISTEM PENGUKURAN EFEK HALL DAN APLIKASINYA PADA PENENTUAN PARAMETER ELEKTRONIK FILM TIPIS GALIUM NITRIDA
author_facet Setyarsih, Woro
author_sort Setyarsih, Woro
title OTOMATISASI SISTEM PENGUKURAN EFEK HALL DAN APLIKASINYA PADA PENENTUAN PARAMETER ELEKTRONIK FILM TIPIS GALIUM NITRIDA
title_short OTOMATISASI SISTEM PENGUKURAN EFEK HALL DAN APLIKASINYA PADA PENENTUAN PARAMETER ELEKTRONIK FILM TIPIS GALIUM NITRIDA
title_full OTOMATISASI SISTEM PENGUKURAN EFEK HALL DAN APLIKASINYA PADA PENENTUAN PARAMETER ELEKTRONIK FILM TIPIS GALIUM NITRIDA
title_fullStr OTOMATISASI SISTEM PENGUKURAN EFEK HALL DAN APLIKASINYA PADA PENENTUAN PARAMETER ELEKTRONIK FILM TIPIS GALIUM NITRIDA
title_full_unstemmed OTOMATISASI SISTEM PENGUKURAN EFEK HALL DAN APLIKASINYA PADA PENENTUAN PARAMETER ELEKTRONIK FILM TIPIS GALIUM NITRIDA
title_sort otomatisasi sistem pengukuran efek hall dan aplikasinya pada penentuan parameter elektronik film tipis galium nitrida
url https://digilib.itb.ac.id/gdl/view/5017
_version_ 1820663562817765376

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