Wettability analysis on platinum deposited wafer after reactive ion ecthing using SF6+argon/CF4+argon gaseous
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2014
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my.unimap-351222014-06-05T09:03:30Z Wettability analysis on platinum deposited wafer after reactive ion ecthing using SF6+argon/CF4+argon gaseous Retnasamy, Vithyacharan Zaliman, Sauli, Dr. Aaron, Koay Terr Yeow Goh, Siew Chui Kamarudin, Hussin, Brig. Jen. Dato' Prof. Dr. vc.sundress@gmail.com zaliman@unimap.edu.my vc@unimap.edu.my Contact angle DOE Platinum RIE Wetability Link to publisher's homepage at http://www.aensiweb.com/ Wettability in microfluidic has direct influence to its fluid flow channels. This paper investigates the variable parameters that affect the wetability in terms of contact angle on a Platinum deposited wafer after reactive ion etching (RIE). A total of four controllable process variables, with 16 sets of experiments were scrutinized using a designed design of experiment (DOE). The four variables in the investigation are ICP power, Bias power, working pressure, and type of gaseous used. The result suggests that the type of gaseous is the most significant effect contributing to the contact angle values where SF6+Ar gives higher values of contact angle compared to CF4+Ar gas. All the experiments produced the contact angle greater than 90° and are included in hydrophilic category. 2014-06-05T09:03:30Z 2014-06-05T09:03:30Z 2013-10 Article Advances in Environmental Biology, vol. 7(SPEC. ISSUE 12), 2013, pages 3654-3659 1995-0756 http://www.aensiweb.com/old/aeb_October-special_2013.html http://dspace.unimap.edu.my:80/dspace/handle/123456789/35122 en AENSI Publisher All rights reserved |
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Contact angle DOE Platinum RIE Wetability |
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Contact angle DOE Platinum RIE Wetability Retnasamy, Vithyacharan Zaliman, Sauli, Dr. Aaron, Koay Terr Yeow Goh, Siew Chui Kamarudin, Hussin, Brig. Jen. Dato' Prof. Dr. Wettability analysis on platinum deposited wafer after reactive ion ecthing using SF6+argon/CF4+argon gaseous |
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Link to publisher's homepage at http://www.aensiweb.com/ |
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vc.sundress@gmail.com |
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vc.sundress@gmail.com Retnasamy, Vithyacharan Zaliman, Sauli, Dr. Aaron, Koay Terr Yeow Goh, Siew Chui Kamarudin, Hussin, Brig. Jen. Dato' Prof. Dr. |
| format |
Article |
| author |
Retnasamy, Vithyacharan Zaliman, Sauli, Dr. Aaron, Koay Terr Yeow Goh, Siew Chui Kamarudin, Hussin, Brig. Jen. Dato' Prof. Dr. |
| author_sort |
Retnasamy, Vithyacharan |
| title |
Wettability analysis on platinum deposited wafer after reactive ion ecthing using SF6+argon/CF4+argon gaseous |
| title_short |
Wettability analysis on platinum deposited wafer after reactive ion ecthing using SF6+argon/CF4+argon gaseous |
| title_full |
Wettability analysis on platinum deposited wafer after reactive ion ecthing using SF6+argon/CF4+argon gaseous |
| title_fullStr |
Wettability analysis on platinum deposited wafer after reactive ion ecthing using SF6+argon/CF4+argon gaseous |
| title_full_unstemmed |
Wettability analysis on platinum deposited wafer after reactive ion ecthing using SF6+argon/CF4+argon gaseous |
| title_sort |
wettability analysis on platinum deposited wafer after reactive ion ecthing using sf6+argon/cf4+argon gaseous |
| publisher |
AENSI Publisher All rights reserved |
| publishDate |
2014 |
| url |
http://dspace.unimap.edu.my:80/dspace/handle/123456789/35122 |
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1643797713056169984 |