C45 ultra low k wafer technology with Cu wire bonding

• Main Authors: Leng E.P., Siong C.T., Seong L.B., Leong P., Gunasekaran, Song J., Mock K., Siew C., Sivakumar, Kid W.B., Weily C.
• Other Authors: 26423002500
• Format: Conference Paper
• Published: 2023
• Subjects: Cost reduction; Electric conductivity; Industrial electronics; Manufacture; Technology; Wire; Bond pad; Electrical conductivity; Electrical resistivity; Gold prices; Ultra fine pitch; Ultra low-k; Wafer technology; Wire bonding; Wire diameter; Wafer bonding
• Institution: Universiti Tenaga Nasional

As gold price continues to move in an overall rising trend, conversion to Cu wire has been given great focus as the main effort for cost reduction. Cu is a good alternative due to 26% lower electrical resistivity than Au, hence much higher electrical conductivity. However, Cu free-air-ball and bonde...