Changes in minority carrier lifetime of hydrogen-terminated Si surfaces in dry-and wet-air
Minority carrier lifetime of HF-treated Si (100) surfaces decreases in wet-air more rapidly than in dry-air. XPS measurements show that OH and O are mainly included in Si by keeping in wet-air and dry-air, respectively. OH cannot form network, and thus backbonded OH generates Si dangling bonds. On t...
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| Main Authors: | , , , |
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| Format: | text |
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Animo Repository
2012
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| Subjects: | |
| Online Access: | https://animorepository.dlsu.edu.ph/faculty_research/5897 |
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| Institution: | De La Salle University |
| Summary: | Minority carrier lifetime of HF-treated Si (100) surfaces decreases in wet-air more rapidly than in dry-air. XPS measurements show that OH and O are mainly included in Si by keeping in wet-air and dry-air, respectively. OH cannot form network, and thus backbonded OH generates Si dangling bonds. On the other hand, backbonded O can form Si-O-Si networks, leading to the higher lifetime due to lower defect density. When the atmosphere is switched from dry-air to wet-air, the lifetime greatly decreases, and the workfunction increases. These changes are attributed to dominant formation of backbonded OH. |
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