Changes in minority carrier lifetime of hydrogen-terminated Si surfaces in dry-and wet-air

• Main Authors: Franco, Francisco C., Jr., Matsumoto, Taketoshi, Woo-Byoun, Kim, Kobayashi, Hikaru
• Format: text
• Published: Animo Repository 2012
• Subjects: Silicon—Surfaces; Silicon—Oxidation; Semiconductors; Chemistry
• Online Access: https://animorepository.dlsu.edu.ph/faculty_research/5897
• Institution: De La Salle University

Minority carrier lifetime of HF-treated Si (100) surfaces decreases in wet-air more rapidly than in dry-air. XPS measurements show that OH and O are mainly included in Si by keeping in wet-air and dry-air, respectively. OH cannot form network, and thus backbonded OH generates Si dangling bonds. On t...