Changes in minority carrier lifetime of hydrogen-terminated Si surfaces in dry-and wet-air

Changes in minority carrier lifetime of hydrogen-terminated Si surfaces in dry-and wet-air

Minority carrier lifetime of HF-treated Si (100) surfaces decreases in wet-air more rapidly than in dry-air. XPS measurements show that OH and O are mainly included in Si by keeping in wet-air and dry-air, respectively. OH cannot form network, and thus backbonded OH generates Si dangling bonds. On t...

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Main Authors: Franco, Francisco C., Jr., Matsumoto, Taketoshi, Woo-Byoun, Kim, Kobayashi, Hikaru
Format: text
Published: Animo Repository 2012
Subjects:
Silicon—Surfaces
Silicon—Oxidation
Semiconductors
Chemistry
Online Access:https://animorepository.dlsu.edu.ph/faculty_research/5897
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Institution: De La Salle University
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spelling oai:animorepository.dlsu.edu.ph:faculty_research-64962022-05-16T07:42:30Z Changes in minority carrier lifetime of hydrogen-terminated Si surfaces in dry-and wet-air Franco, Francisco C., Jr. Matsumoto, Taketoshi Woo-Byoun, Kim Kobayashi, Hikaru Minority carrier lifetime of HF-treated Si (100) surfaces decreases in wet-air more rapidly than in dry-air. XPS measurements show that OH and O are mainly included in Si by keeping in wet-air and dry-air, respectively. OH cannot form network, and thus backbonded OH generates Si dangling bonds. On the other hand, backbonded O can form Si-O-Si networks, leading to the higher lifetime due to lower defect density. When the atmosphere is switched from dry-air to wet-air, the lifetime greatly decreases, and the workfunction increases. These changes are attributed to dominant formation of backbonded OH. 2012-09-27T07:00:00Z text https://animorepository.dlsu.edu.ph/faculty_research/5897 Faculty Research Work Animo Repository Silicon—Surfaces Silicon—Oxidation Semiconductors Chemistry
institution De La Salle University
building De La Salle University Library
continent Asia
country Philippines
Philippines
content_provider De La Salle University Library
collection DLSU Institutional Repository
topic Silicon—Surfaces
Silicon—Oxidation
Semiconductors
Chemistry
spellingShingle Silicon—Surfaces
Silicon—Oxidation
Semiconductors
Chemistry
Franco, Francisco C., Jr.
Matsumoto, Taketoshi
Woo-Byoun, Kim
Kobayashi, Hikaru
Changes in minority carrier lifetime of hydrogen-terminated Si surfaces in dry-and wet-air
description Minority carrier lifetime of HF-treated Si (100) surfaces decreases in wet-air more rapidly than in dry-air. XPS measurements show that OH and O are mainly included in Si by keeping in wet-air and dry-air, respectively. OH cannot form network, and thus backbonded OH generates Si dangling bonds. On the other hand, backbonded O can form Si-O-Si networks, leading to the higher lifetime due to lower defect density. When the atmosphere is switched from dry-air to wet-air, the lifetime greatly decreases, and the workfunction increases. These changes are attributed to dominant formation of backbonded OH.
format text
author Franco, Francisco C., Jr.
Matsumoto, Taketoshi
Woo-Byoun, Kim
Kobayashi, Hikaru
author_facet Franco, Francisco C., Jr.
Matsumoto, Taketoshi
Woo-Byoun, Kim
Kobayashi, Hikaru
author_sort Franco, Francisco C., Jr.
title Changes in minority carrier lifetime of hydrogen-terminated Si surfaces in dry-and wet-air
title_short Changes in minority carrier lifetime of hydrogen-terminated Si surfaces in dry-and wet-air
title_full Changes in minority carrier lifetime of hydrogen-terminated Si surfaces in dry-and wet-air
title_fullStr Changes in minority carrier lifetime of hydrogen-terminated Si surfaces in dry-and wet-air
title_full_unstemmed Changes in minority carrier lifetime of hydrogen-terminated Si surfaces in dry-and wet-air
title_sort changes in minority carrier lifetime of hydrogen-terminated si surfaces in dry-and wet-air
publisher Animo Repository
publishDate 2012
url https://animorepository.dlsu.edu.ph/faculty_research/5897
_version_ 1767196365626015744

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