Intrinsic nanofilamentation in resistive switching

• Main Authors: Migas, Dmitri B., Borisenko, Victor E., Wu, Xing, Cha, Dongkyu, Bosman, Michel, Raghavan, Nagarajan, Zhang, Xi Xiang, Li, Kun, Pey, Kin Leong
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2014
• Subjects: DRNTU::Science::Physics::Electricity and magnetism
• Online Access: https://hdl.handle.net/10356/100029; http://hdl.handle.net/10220/18627
• Institution: Nanyang Technological University

Resistive switching materials are promising candidates for nonvolatile data storage and reconfiguration of electronic applications. Intensive studies have been carried out on sandwiched metal-insulator-metal structures to achieve high density on-chip circuitry and non-volatile memory storage. Here,...