Intrinsic nanofilamentation in resistive switching
Resistive switching materials are promising candidates for nonvolatile data storage and reconfiguration of electronic applications. Intensive studies have been carried out on sandwiched metal-insulator-metal structures to achieve high density on-chip circuitry and non-volatile memory storage. Here,...
Saved in:
Main Authors: | Migas, Dmitri B., Borisenko, Victor E., Wu, Xing, Cha, Dongkyu, Bosman, Michel, Raghavan, Nagarajan, Zhang, Xi Xiang, Li, Kun, Pey, Kin Leong |
---|---|
Other Authors: | School of Electrical and Electronic Engineering |
Format: | Article |
Language: | English |
Published: |
2014
|
Subjects: | |
Online Access: | https://hdl.handle.net/10356/100029 http://hdl.handle.net/10220/18627 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
Similar Items
-
Percolative model and thermodynamic analysis of oxygen-ion-mediated resistive switching
by: Raghavan, Nagarajan, et al.
Published: (2013) -
Atomic scale modulation of self‐rectifying resistive switching by interfacial defects
by: Wu, Xing, et al.
Published: (2018) -
Dielectric breakdown - recovery in logic and resistive switching in memory : bridging the gap between the two phenomena
by: Pey, Kin Leong, et al.
Published: (2013) -
Thermal reversible breakdown and resistivity switching in hafnium dioxide
by: Migas, D. B., et al.
Published: (2014) -
Triggering voltage for post-breakdown random telegraph noise in HfLaO dielectric metal gate metal-oxide-semiconductor field effect transistors and its reliability implications
by: Liu, W. H., et al.
Published: (2013)