Strain states of AlN/GaN-stress mitigating layer and their effect on GaN buffer layer grown by ammonia molecular beam epitaxy on 100-mm Si(111)

• Main Authors: Ravikiran, L., Radhakrishnan, K., Agrawal, M., Munawar Basha, S., Dharmarasu, Nethaji
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2014
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Molecular electronics
• Online Access: https://hdl.handle.net/10356/100675; http://hdl.handle.net/10220/18588
• Institution: Nanyang Technological University

The effect of strain states of AlN/GaN-stress mitigating layer (SML) on buried crack density and its subsequent influence on the residual stresses in GaN buffer layers grown using ammonia-molecular beam epitaxy on 100-mm Si(111) substrate has been investigated. Different stages involved in the forma...