Strain states of AlN/GaN-stress mitigating layer and their effect on GaN buffer layer grown by ammonia molecular beam epitaxy on 100-mm Si(111)
The effect of strain states of AlN/GaN-stress mitigating layer (SML) on buried crack density and its subsequent influence on the residual stresses in GaN buffer layers grown using ammonia-molecular beam epitaxy on 100-mm Si(111) substrate has been investigated. Different stages involved in the forma...
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Main Authors: | Ravikiran, L., Radhakrishnan, K., Agrawal, M., Munawar Basha, S., Dharmarasu, Nethaji |
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Other Authors: | School of Electrical and Electronic Engineering |
Format: | Article |
Language: | English |
Published: |
2014
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/100675 http://hdl.handle.net/10220/18588 |
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Institution: | Nanyang Technological University |
Language: | English |
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