Tunneling field-effect transistor with Ge/In0.53Ga0.47As heterostructure as tunneling junction

• المؤلفون الرئيسيون: Hu, Hailong., Guo, Pengfei, Yang, Yue, Cheng, Yuanbing, Han, Genquan, Pan, Jisheng, Ivana, Zhang, Zheng, Shen, Zexiang, Chia, Ching Kean, Yeo, Yee-Chia
• مؤلفون آخرون: School of Physical and Mathematical Sciences
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/100689; http://hdl.handle.net/10220/11036
• المؤسسة: Nanyang Technological University

High quality epitaxial germanium (Ge) was successfully grown on In0.53Ga0.47As substrate using a metal-organic chemical vapor deposition tool. The valence band offset ΔEV between the Ge layer and In0.53Ga0.47As determined by high-resolution x-ray photoelectron spectroscopy was found to be 0.5 ± 0.1 ...