Tunneling field-effect transistor with Ge/In0.53Ga0.47As heterostructure as tunneling junction
High quality epitaxial germanium (Ge) was successfully grown on In0.53Ga0.47As substrate using a metal-organic chemical vapor deposition tool. The valence band offset ΔEV between the Ge layer and In0.53Ga0.47As determined by high-resolution x-ray photoelectron spectroscopy was found to be 0.5 ± 0.1 ...
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| Main Authors: | , , , , , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2013
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| Online Access: | https://hdl.handle.net/10356/100689 http://hdl.handle.net/10220/11036 |
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| Institution: | Nanyang Technological University |
| Language: | English |