Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition

Si/Si0.66Ge0.34 coupled quantum well (CQW) structures with different barrier thickness of 40, 4 and 2 nm were grown on Si substrates using an ultra high vacuum chemical vapor deposition (UHVCVD) system. The samples were characterized using high resolution x-ray diffraction (HRXRD), crosssectional...

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Main Authors: Wang, Rui, Yoon, Soon Fatt, Lu, Fen, Fan, Weijun, Liu, Chongyang, Loh, Ter-Hoe, Nguyen, Hoai Son, Narayanan, Balasubramanian
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
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Online Access:https://hdl.handle.net/10356/100764
http://hdl.handle.net/10220/18135
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1007642020-03-07T14:00:31Z Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition Wang, Rui Yoon, Soon Fatt Lu, Fen Fan, Weijun Liu, Chongyang Loh, Ter-Hoe Nguyen, Hoai Son Narayanan, Balasubramanian School of Electrical and Electronic Engineering A*STAR Institute of Microelectronics Electrical and Electronic Engineering Si/Si0.66Ge0.34 coupled quantum well (CQW) structures with different barrier thickness of 40, 4 and 2 nm were grown on Si substrates using an ultra high vacuum chemical vapor deposition (UHVCVD) system. The samples were characterized using high resolution x-ray diffraction (HRXRD), crosssectional transmission electron microscopy (XTEM) and photoluminescence (PL) spectroscopy. Blue shift in PL peak energy due to interwell coupling was observed in the CQWs following increase in the Si barrier thickness. The Si/SiGe heterostructure growth process and theoretical band structure model was validated by comparing the energy of the no-phonon peak calculated by the 6 + 2-band k p method with experimental PL data. Close agreement between theoretical calculations and experimental data was obtained. 2013-12-06T05:17:36Z 2019-12-06T20:27:49Z 2013-12-06T05:17:36Z 2019-12-06T20:27:49Z 2007 2007 Journal Article Wang, R., Yoon, S. F., Lu, F., Fan, W., Liu, C., Loh, T. H., Nguyen, H. S., & Narayanan, B. (2007). Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition. Nanoscale research letters, 2(3), 149-154. https://hdl.handle.net/10356/100764 http://hdl.handle.net/10220/18135 10.1007/s11671-007-9046-8 en Nanoscale research letters © 2007 To The Authors. This paper was published in Nanoscale Research Letters and is made available as an electronic reprint (preprint) with permission of To The Authors. The paper can be found at the following official DOI: http://dx.doi.org/10.1007/s11671-007-9046-8.  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 6 p. application/pdf
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic Electrical and Electronic Engineering
spellingShingle Electrical and Electronic Engineering
Wang, Rui
Yoon, Soon Fatt
Lu, Fen
Fan, Weijun
Liu, Chongyang
Loh, Ter-Hoe
Nguyen, Hoai Son
Narayanan, Balasubramanian
Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition
description Si/Si0.66Ge0.34 coupled quantum well (CQW) structures with different barrier thickness of 40, 4 and 2 nm were grown on Si substrates using an ultra high vacuum chemical vapor deposition (UHVCVD) system. The samples were characterized using high resolution x-ray diffraction (HRXRD), crosssectional transmission electron microscopy (XTEM) and photoluminescence (PL) spectroscopy. Blue shift in PL peak energy due to interwell coupling was observed in the CQWs following increase in the Si barrier thickness. The Si/SiGe heterostructure growth process and theoretical band structure model was validated by comparing the energy of the no-phonon peak calculated by the 6 + 2-band k p method with experimental PL data. Close agreement between theoretical calculations and experimental data was obtained.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Wang, Rui
Yoon, Soon Fatt
Lu, Fen
Fan, Weijun
Liu, Chongyang
Loh, Ter-Hoe
Nguyen, Hoai Son
Narayanan, Balasubramanian
format Article
author Wang, Rui
Yoon, Soon Fatt
Lu, Fen
Fan, Weijun
Liu, Chongyang
Loh, Ter-Hoe
Nguyen, Hoai Son
Narayanan, Balasubramanian
author_sort Wang, Rui
title Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition
title_short Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition
title_full Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition
title_fullStr Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition
title_full_unstemmed Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition
title_sort interwell coupling effect in si/sige quantum wells grown by ultra high vacuum chemical vapor deposition
publishDate 2013
url https://hdl.handle.net/10356/100764
http://hdl.handle.net/10220/18135
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