Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition

• Main Authors: Wang, Rui, Yoon, Soon Fatt, Lu, Fen, Fan, Weijun, Liu, Chongyang, Loh, Ter-Hoe, Nguyen, Hoai Son, Narayanan, Balasubramanian
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: Electrical and Electronic Engineering
• Online Access: https://hdl.handle.net/10356/100764; http://hdl.handle.net/10220/18135
• Institution: Nanyang Technological University

Si/Si0.66Ge0.34 coupled quantum well (CQW) structures with different barrier thickness of 40, 4 and 2 nm were grown on Si substrates using an ultra high vacuum chemical vapor deposition (UHVCVD) system. The samples were characterized using high resolution x-ray diffraction (HRXRD), crosssectional...