Electronic structure and optical gain saturation of InAs[sub 1−x]N[sub x]/GaAs quantum dots

• Main Authors: Zhang, X. W., Chen, J., Xu, Q., Li, S. S., Fan, Weijun, Xia, Jian-Bai
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/100828; http://hdl.handle.net/10220/18168
• Institution: Nanyang Technological University

The electronic band structures and optical gains of InAs1−xNx /GaAs pyramid quantum dots QDs are calculated using the ten-band k·p model and the valence force field method. The optical gains are calculated using the zero-dimensional optical gain formula with taking into consideration of both ho...