A novel self-selection bipolar RRAM cell with ultra-low operation currents for cross-point application

• Main Authors: Gao, Bin, Kang, Jinfeng, Chen, Bing, Huang, Peng, Ma, Long, Zhang, Feifei, Liu, Lifeng, Liu, Xiaoyan, Tran, Xuan Anh, Yu, Hongyu
• Other Authors: School of Electrical and Electronic Engineering
• Format: Conference or Workshop Item
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/101274; http://hdl.handle.net/10220/16309
• Institution: Nanyang Technological University

A self-selection and self-compliance bipolar RRAM cell based on TiN/HfOx/n+-Si structure is proposed for the CMOS compatible and ultra low power cross-point array application. Electrical forming scheme is important to achieved desired resistive switching performance due to the existing of interface sub-oxide layer. For RRAM cell, ultra-low RESET current <; 0.5 μA and good reliability (retention @ 150 °C > 104 seconds and endurance > 104 cycles) are demonstrated after optimization by material-oriented methodology. The write and read operation could be performed correctly without additional selector.