A novel self-selection bipolar RRAM cell with ultra-low operation currents for cross-point application

• المؤلفون الرئيسيون: Gao, Bin, Kang, Jinfeng, Chen, Bing, Huang, Peng, Ma, Long, Zhang, Feifei, Liu, Lifeng, Liu, Xiaoyan, Tran, Xuan Anh, Yu, Hongyu
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: Conference or Workshop Item
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/101274; http://hdl.handle.net/10220/16309

A self-selection and self-compliance bipolar RRAM cell based on TiN/HfOx/n+-Si structure is proposed for the CMOS compatible and ultra low power cross-point array application. Electrical forming scheme is important to achieved desired resistive switching performance due to the existing of interface...