Phase and layer stability of Ni- and Ni(Pt)-silicides on narrow poly-Si lines

The phase and morphology stability of NiSi and Ni(Pt)Si formed on the poly-Si lines and wide pads have been studied. Differences in the NiSi2 nucleation temperature and the extent of layer inversion have been analyzed. The nucleation of NiSi2 was hindered on the narrow poly-Si lines a...

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Main Authors:	Mangelinck, D., Dai, J. Y., Chan, L., Ding, Jun, Chi, Dong Zhi, Lee, Pooi See, Pey, Kin Leong
Other Authors:	School of Materials Science & Engineering
Format:	Article
Language:	English
Published:	2012
Subjects:	DRNTU::Engineering::Materials
Online Access:	https://hdl.handle.net/10356/101406 http://hdl.handle.net/10220/8059
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Institution:	Nanyang Technological University
Language:	English

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spelling	sg-ntu-dr.10356-1014062023-07-14T15:54:43Z Phase and layer stability of Ni- and Ni(Pt)-silicides on narrow poly-Si lines Mangelinck, D. Dai, J. Y. Chan, L. Ding, Jun Chi, Dong Zhi Lee, Pooi See Pey, Kin Leong School of Materials Science & Engineering DRNTU::Engineering::Materials The phase and morphology stability of NiSi and Ni(Pt)Si formed on the poly-Si lines and wide pads have been studied. Differences in the NiSi2 nucleation temperature and the extent of layer inversion have been analyzed. The nucleation of NiSi2 was hindered on the narrow poly-Si lines as compared to that on the large area poly-Si pads at 750°C. Stress is believed to play an important role in the delayed nucleation of NiSi2 . In addition, layer inversion was found to be less severe on the narrow poly-Si lines as compared to that on the poly-Si pads after being subjected to the same annealing condition. This is likely due to the limiting grain growth of the poly-Si in the narrow lines. Enhanced stability of Ni(Pt)Si was achieved up to 800°C on both poly-Si wide pads and narrow lines. Published version 2012-05-17T01:14:31Z 2019-12-06T20:38:09Z 2012-05-17T01:14:31Z 2019-12-06T20:38:09Z 2002 2002 Journal Article Lee, P. S., Pey, K. L., Mangelick, D., Ding, J., Chi, D. Z., Dai, J. Y., et al. (2002). Phase and layer stability of Ni- and Ni(Pt)-silicides on narrow poly-Si lines. Journal of The Electrochemical Society, 149(6). https://hdl.handle.net/10356/101406 http://hdl.handle.net/10220/8059 10.1149/1.1473192 en Journal of the electrochemical society © 2002 The Electrochemical Society. This paper was published in Journal of The Electrochemical Society and is made available as an electronic reprint (preprint) with permission of The Electrochemical Society. The paper can be found at the following official URL: http://dx.doi.org/10.1149/1.1473192. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 5 p. application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
language	English
topic	DRNTU::Engineering::Materials
spellingShingle	DRNTU::Engineering::Materials Mangelinck, D. Dai, J. Y. Chan, L. Ding, Jun Chi, Dong Zhi Lee, Pooi See Pey, Kin Leong Phase and layer stability of Ni- and Ni(Pt)-silicides on narrow poly-Si lines
description	The phase and morphology stability of NiSi and Ni(Pt)Si formed on the poly-Si lines and wide pads have been studied. Differences in the NiSi2 nucleation temperature and the extent of layer inversion have been analyzed. The nucleation of NiSi2 was hindered on the narrow poly-Si lines as compared to that on the large area poly-Si pads at 750°C. Stress is believed to play an important role in the delayed nucleation of NiSi2 . In addition, layer inversion was found to be less severe on the narrow poly-Si lines as compared to that on the poly-Si pads after being subjected to the same annealing condition. This is likely due to the limiting grain growth of the poly-Si in the narrow lines. Enhanced stability of Ni(Pt)Si was achieved up to 800°C on both poly-Si wide pads and narrow lines.
author2	School of Materials Science & Engineering
author_facet	School of Materials Science & Engineering Mangelinck, D. Dai, J. Y. Chan, L. Ding, Jun Chi, Dong Zhi Lee, Pooi See Pey, Kin Leong
format	Article
author	Mangelinck, D. Dai, J. Y. Chan, L. Ding, Jun Chi, Dong Zhi Lee, Pooi See Pey, Kin Leong
author_sort	Mangelinck, D.
title	Phase and layer stability of Ni- and Ni(Pt)-silicides on narrow poly-Si lines
title_short	Phase and layer stability of Ni- and Ni(Pt)-silicides on narrow poly-Si lines
title_full	Phase and layer stability of Ni- and Ni(Pt)-silicides on narrow poly-Si lines
title_fullStr	Phase and layer stability of Ni- and Ni(Pt)-silicides on narrow poly-Si lines
title_full_unstemmed	Phase and layer stability of Ni- and Ni(Pt)-silicides on narrow poly-Si lines
title_sort	phase and layer stability of ni- and ni(pt)-silicides on narrow poly-si lines
publishDate	2012
url	https://hdl.handle.net/10356/101406 http://hdl.handle.net/10220/8059
_version_	1772826816828932096

Phase and layer stability of Ni- and Ni(Pt)-silicides on narrow poly-Si lines

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