Uncooled resonant infrared detector based on aluminum nitride piezoelectric film through charge generations and lattice absorptions

Uncooled resonant infrared detector based on aluminum nitride piezoelectric film through charge generations and lattice absorptions

This Letter demonstrates an aluminum nitride (AlN) based uncooled resonant infrared (IR) detector utilizing the photo-sensitive and piezoelectric properties of polycrystalline AlN. The AlN Lamb wave mode resonator is found responsive to IR illuminations by showing a decrease in the S 21 magnitude in...

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Bibliographic Details
Main Authors: Tan, Chuan Seng, Kropelnicki, P., Zhu, Y., Randles, A. B., Gu, Y. A., Leong, K. C., Ang, Wan Chia
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2014
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Online Access:https://hdl.handle.net/10356/101698
http://hdl.handle.net/10220/19754
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Institution: Nanyang Technological University
Language: English
Description
Summary:This Letter demonstrates an aluminum nitride (AlN) based uncooled resonant infrared (IR) detector utilizing the photo-sensitive and piezoelectric properties of polycrystalline AlN. The AlN Lamb wave mode resonator is found responsive to IR illuminations by showing a decrease in the S 21 magnitude instead of a resonant frequency shift. A −0.08 dB shift of S 21 magnitude was observed for an IR incident power of 647 nW, which translates to a responsivity of 124 kdB/W. Photoresponse is proposed for the IR sensing mechanism through additional charge carriers generation rather than thermal effects.

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