Annealing effect on the optical properties of implanted silicon in a silicon nitride matrix
Optical properties of implanted Si in a silicon nitride thin film have been determined with spectroscopic ellipsometry based on the Tauc–Lorentz (TL) model and the Bruggeman effective medium approximation. It is shown that the suppressed dielectric functions of the implanted Si are dominated by the...
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Main Authors: | , , , , , , , , |
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格式: | Article |
語言: | English |
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2010
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在線閱讀: | https://hdl.handle.net/10356/101981 http://hdl.handle.net/10220/6400 |
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