Annealing effect on the optical properties of implanted silicon in a silicon nitride matrix

Optical properties of implanted Si in a silicon nitride thin film have been determined with spectroscopic ellipsometry based on the Tauc–Lorentz (TL) model and the Bruggeman effective medium approximation. It is shown that the suppressed dielectric functions of the implanted Si are dominated by the...

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Main Authors: Fung, Stevenson Hon Yuen, Liu, Yang, Yang, Ming, Wong, Jen It, Liu, Yu Chan, Liu, Zhen, Cen, Zhan Hong, Chen, Tupei, Ding, Liang
其他作者: School of Electrical and Electronic Engineering
格式: Article
語言:English
出版: 2010
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在線閱讀:https://hdl.handle.net/10356/101981
http://hdl.handle.net/10220/6400
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