Annealing effect on the optical properties of implanted silicon in a silicon nitride matrix

• Main Authors: Fung, Stevenson Hon Yuen, Liu, Yang, Yang, Ming, Wong, Jen It, Liu, Yu Chan, Liu, Zhen, Cen, Zhan Hong, Chen, Tupei, Ding, Liang
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2010
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
• Online Access: https://hdl.handle.net/10356/101981; http://hdl.handle.net/10220/6400
• Institution: Nanyang Technological University

Optical properties of implanted Si in a silicon nitride thin film have been determined with spectroscopic ellipsometry based on the Tauc–Lorentz (TL) model and the Bruggeman effective medium approximation. It is shown that the suppressed dielectric functions of the implanted Si are dominated by the...