Homogeneous chip to wafer bonding of InP-Al2O3-Si using UV/O3 activation

• المؤلفون الرئيسيون: Tan, Chuan Seng, Anantha, P.
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2014
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/102017; http://hdl.handle.net/10220/18857
• المؤسسة: Nanyang Technological University

A direct chip to wafer bonding of indium phosphide (InP) onto silicon using Al2O3 as the intermediate homogenous bonding layer is reported. Intermediate film thickness is varied from 5 to 20 nm and the UV/O3 activation time is optimized to result in minimal surface roughness and contact angle requir...