The role of a tensile stress bias for a sensitive silicon mechanical stress sensor based on a change in gate-induced-drain leakage current
Mechanical stress sensors based on silicon piezoresistance have limited sensitivity. Mechanical stress sensors based on the on-current or off-current or threshold voltage of silicon MOS transistors also have limited sensitivity. In this paper, we report that the sensitivity of a silicon-based mechan...
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sg-ntu-dr.10356-1025422020-03-07T14:00:34Z The role of a tensile stress bias for a sensitive silicon mechanical stress sensor based on a change in gate-induced-drain leakage current Lau, W. S. Yang, Peizhen. Siah, S. Y. Chan, L. School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering Mechanical stress sensors based on silicon piezoresistance have limited sensitivity. Mechanical stress sensors based on the on-current or off-current or threshold voltage of silicon MOS transistors also have limited sensitivity. In this paper, we report that the sensitivity of a silicon-based mechanical sensor can be significantly improved by simply monitoring the gate-induced-drain leakage (GIDL) current of an n-channel MOS transistor. The role of a tensile mechanical stress bias will also be discussed. 2013-07-12T03:46:45Z 2019-12-06T20:56:45Z 2013-07-12T03:46:45Z 2019-12-06T20:56:45Z 2012 2012 Journal Article https://hdl.handle.net/10356/102542 http://hdl.handle.net/10220/11296 10.1016/j.microrel.2012.06.111 en Microelectronics reliability © 2012 Elsevier Ltd. |
| institution |
Nanyang Technological University |
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NTU Library |
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Singapore |
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DR-NTU |
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English |
| topic |
DRNTU::Engineering::Electrical and electronic engineering |
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DRNTU::Engineering::Electrical and electronic engineering Lau, W. S. Yang, Peizhen. Siah, S. Y. Chan, L. The role of a tensile stress bias for a sensitive silicon mechanical stress sensor based on a change in gate-induced-drain leakage current |
| description |
Mechanical stress sensors based on silicon piezoresistance have limited sensitivity. Mechanical stress sensors based on the on-current or off-current or threshold voltage of silicon MOS transistors also have limited sensitivity. In this paper, we report that the sensitivity of a silicon-based mechanical sensor can be significantly improved by simply monitoring the gate-induced-drain leakage (GIDL) current of an n-channel MOS transistor. The role of a tensile mechanical stress bias will also be discussed. |
| author2 |
School of Electrical and Electronic Engineering |
| author_facet |
School of Electrical and Electronic Engineering Lau, W. S. Yang, Peizhen. Siah, S. Y. Chan, L. |
| format |
Article |
| author |
Lau, W. S. Yang, Peizhen. Siah, S. Y. Chan, L. |
| author_sort |
Lau, W. S. |
| title |
The role of a tensile stress bias for a sensitive silicon mechanical stress sensor based on a change in gate-induced-drain leakage current |
| title_short |
The role of a tensile stress bias for a sensitive silicon mechanical stress sensor based on a change in gate-induced-drain leakage current |
| title_full |
The role of a tensile stress bias for a sensitive silicon mechanical stress sensor based on a change in gate-induced-drain leakage current |
| title_fullStr |
The role of a tensile stress bias for a sensitive silicon mechanical stress sensor based on a change in gate-induced-drain leakage current |
| title_full_unstemmed |
The role of a tensile stress bias for a sensitive silicon mechanical stress sensor based on a change in gate-induced-drain leakage current |
| title_sort |
role of a tensile stress bias for a sensitive silicon mechanical stress sensor based on a change in gate-induced-drain leakage current |
| publishDate |
2013 |
| url |
https://hdl.handle.net/10356/102542 http://hdl.handle.net/10220/11296 |
| _version_ |
1681038549323874304 |