The role of a tensile stress bias for a sensitive silicon mechanical stress sensor based on a change in gate-induced-drain leakage current

Mechanical stress sensors based on silicon piezoresistance have limited sensitivity. Mechanical stress sensors based on the on-current or off-current or threshold voltage of silicon MOS transistors also have limited sensitivity. In this paper, we report that the sensitivity of a silicon-based mechan...

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Main Authors:	Lau, W. S., Yang, Peizhen., Siah, S. Y., Chan, L.
Other Authors:	School of Electrical and Electronic Engineering
Format:	Article
Language:	English
Published:	2013
Subjects:	DRNTU::Engineering::Electrical and electronic engineering
Online Access:	https://hdl.handle.net/10356/102542 http://hdl.handle.net/10220/11296
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Institution:	Nanyang Technological University
Language:	English

id	sg-ntu-dr.10356-102542
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spelling	sg-ntu-dr.10356-1025422020-03-07T14:00:34Z The role of a tensile stress bias for a sensitive silicon mechanical stress sensor based on a change in gate-induced-drain leakage current Lau, W. S. Yang, Peizhen. Siah, S. Y. Chan, L. School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering Mechanical stress sensors based on silicon piezoresistance have limited sensitivity. Mechanical stress sensors based on the on-current or off-current or threshold voltage of silicon MOS transistors also have limited sensitivity. In this paper, we report that the sensitivity of a silicon-based mechanical sensor can be significantly improved by simply monitoring the gate-induced-drain leakage (GIDL) current of an n-channel MOS transistor. The role of a tensile mechanical stress bias will also be discussed. 2013-07-12T03:46:45Z 2019-12-06T20:56:45Z 2013-07-12T03:46:45Z 2019-12-06T20:56:45Z 2012 2012 Journal Article https://hdl.handle.net/10356/102542 http://hdl.handle.net/10220/11296 10.1016/j.microrel.2012.06.111 en Microelectronics reliability © 2012 Elsevier Ltd.
institution	Nanyang Technological University
building	NTU Library
country	Singapore
collection	DR-NTU
language	English
topic	DRNTU::Engineering::Electrical and electronic engineering
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering Lau, W. S. Yang, Peizhen. Siah, S. Y. Chan, L. The role of a tensile stress bias for a sensitive silicon mechanical stress sensor based on a change in gate-induced-drain leakage current
description	Mechanical stress sensors based on silicon piezoresistance have limited sensitivity. Mechanical stress sensors based on the on-current or off-current or threshold voltage of silicon MOS transistors also have limited sensitivity. In this paper, we report that the sensitivity of a silicon-based mechanical sensor can be significantly improved by simply monitoring the gate-induced-drain leakage (GIDL) current of an n-channel MOS transistor. The role of a tensile mechanical stress bias will also be discussed.
author2	School of Electrical and Electronic Engineering
author_facet	School of Electrical and Electronic Engineering Lau, W. S. Yang, Peizhen. Siah, S. Y. Chan, L.
format	Article
author	Lau, W. S. Yang, Peizhen. Siah, S. Y. Chan, L.
author_sort	Lau, W. S.
title	The role of a tensile stress bias for a sensitive silicon mechanical stress sensor based on a change in gate-induced-drain leakage current
title_short	The role of a tensile stress bias for a sensitive silicon mechanical stress sensor based on a change in gate-induced-drain leakage current
title_full	The role of a tensile stress bias for a sensitive silicon mechanical stress sensor based on a change in gate-induced-drain leakage current
title_fullStr	The role of a tensile stress bias for a sensitive silicon mechanical stress sensor based on a change in gate-induced-drain leakage current
title_full_unstemmed	The role of a tensile stress bias for a sensitive silicon mechanical stress sensor based on a change in gate-induced-drain leakage current
title_sort	role of a tensile stress bias for a sensitive silicon mechanical stress sensor based on a change in gate-induced-drain leakage current
publishDate	2013
url	https://hdl.handle.net/10356/102542 http://hdl.handle.net/10220/11296
_version_	1681038549323874304

The role of a tensile stress bias for a sensitive silicon mechanical stress sensor based on a change in gate-induced-drain leakage current

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