Au-In-based hermetic sealing for MEMS packaging for down-hole application

Hermetic sealing of micro-electro mechanical systems (MEMS) sensors for down-hole application requires high-quality void-free bonds, with metallic hermetic sealing being widely used for this purpose. As most of the MEMS sensors cannot withstand high temperatures, transient liquid phase (TLP) bonding...

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Main Authors: Vivek, Chidambaram, Chen, Bangtao, Gan, Chee Lip, Daniel, Rhee Min Woo
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2014
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Online Access:https://hdl.handle.net/10356/102827
http://hdl.handle.net/10220/24291
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1028272020-06-01T10:01:34Z Au-In-based hermetic sealing for MEMS packaging for down-hole application Vivek, Chidambaram Chen, Bangtao Gan, Chee Lip Daniel, Rhee Min Woo School of Materials Science & Engineering DRNTU::Engineering::Materials::Electronic packaging materials Hermetic sealing of micro-electro mechanical systems (MEMS) sensors for down-hole application requires high-quality void-free bonds, with metallic hermetic sealing being widely used for this purpose. As most of the MEMS sensors cannot withstand high temperatures, transient liquid phase (TLP) bonding is promising for metallic sealing applications, since the re-melting temperature of the bond is much higher than the bonding temperature. In this paper, major issues involving TLP bonding, including non-uniform diffusion kinetics across the interface and the formation of intermetallic compounds prior to bonding for fast reactive metallic systems like Au-In, have been addressed by using diffusion barriers. The performance of various diffusion barriers that include Ti, Ni, and Pt has been evaluated. Ni has been determined to be a prospective candidate, since it averts diffusion to a certain extent prior to TLP bonding. The mechanical strength and hermeticity of the Au-In joints have also been characterized after aging at 300 °C up to 500 h. No major changes in the thermo-mechanical properties of the AuIn and AuIn2 phases were observed and, hence, these phases are concluded to be thermally stable at this temperature regime. Improvements in hermeticity were confirmed when subjected to high-temperature thermal aging. 2014-12-02T08:45:46Z 2019-12-06T21:00:48Z 2014-12-02T08:45:46Z 2019-12-06T21:00:48Z 2014 2014 Journal Article Vivek, C., Chen, B., Gan, C. L., Daniel, R. M. W. (2014). Au-In-based hermetic sealing for MEMS packaging for down-hole application. Journal of electronic materials, 43(7), 2498-2509. https://hdl.handle.net/10356/102827 http://hdl.handle.net/10220/24291 10.1007/s11664-014-3131-4 en Journal of electronic materials © 2014 TMS.
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Materials::Electronic packaging materials
spellingShingle DRNTU::Engineering::Materials::Electronic packaging materials
Vivek, Chidambaram
Chen, Bangtao
Gan, Chee Lip
Daniel, Rhee Min Woo
Au-In-based hermetic sealing for MEMS packaging for down-hole application
description Hermetic sealing of micro-electro mechanical systems (MEMS) sensors for down-hole application requires high-quality void-free bonds, with metallic hermetic sealing being widely used for this purpose. As most of the MEMS sensors cannot withstand high temperatures, transient liquid phase (TLP) bonding is promising for metallic sealing applications, since the re-melting temperature of the bond is much higher than the bonding temperature. In this paper, major issues involving TLP bonding, including non-uniform diffusion kinetics across the interface and the formation of intermetallic compounds prior to bonding for fast reactive metallic systems like Au-In, have been addressed by using diffusion barriers. The performance of various diffusion barriers that include Ti, Ni, and Pt has been evaluated. Ni has been determined to be a prospective candidate, since it averts diffusion to a certain extent prior to TLP bonding. The mechanical strength and hermeticity of the Au-In joints have also been characterized after aging at 300 °C up to 500 h. No major changes in the thermo-mechanical properties of the AuIn and AuIn2 phases were observed and, hence, these phases are concluded to be thermally stable at this temperature regime. Improvements in hermeticity were confirmed when subjected to high-temperature thermal aging.
author2 School of Materials Science & Engineering
author_facet School of Materials Science & Engineering
Vivek, Chidambaram
Chen, Bangtao
Gan, Chee Lip
Daniel, Rhee Min Woo
format Article
author Vivek, Chidambaram
Chen, Bangtao
Gan, Chee Lip
Daniel, Rhee Min Woo
author_sort Vivek, Chidambaram
title Au-In-based hermetic sealing for MEMS packaging for down-hole application
title_short Au-In-based hermetic sealing for MEMS packaging for down-hole application
title_full Au-In-based hermetic sealing for MEMS packaging for down-hole application
title_fullStr Au-In-based hermetic sealing for MEMS packaging for down-hole application
title_full_unstemmed Au-In-based hermetic sealing for MEMS packaging for down-hole application
title_sort au-in-based hermetic sealing for mems packaging for down-hole application
publishDate 2014
url https://hdl.handle.net/10356/102827
http://hdl.handle.net/10220/24291
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