Study of a 1 eV GaNAsSb photovoltaic cell grown on a silicon substrate

• Main Authors: Tan, K. H., Loke, W. K., Wicaksono, S., Li, D., Leong, Y. R., Yoon, S. F., Sharma, P., Milakovich, T., Bulsara, M. T., Fitzgerald, E. A.
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2014
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/103010; http://hdl.handle.net/10220/19145
• Institution: Nanyang Technological University

We report the performance of a 1 eV GaNAsSb photovoltaic cell grown on a Si substrate with a SiGe graded buffer grown using molecular beam epitaxy. For comparison, the performance of a similar 1 eV GaN0.018As0.897 Sb 0.085 photovoltaic cell grown on a GaAs substrate was also reported. Both devices were in situ annealed at 700 °C for 5 min, and a significant performance improvement over our previous result was observed. The device on the GaAs substrate showed a low open circuit voltage (VOC) of 0.42 V and a short circuit current density (JSC) of 23.4 mA/cm2 while the device on the Si substrate showed a VOC of 0.39 V and a JSC of 21.3 mA/cm2. Both devices delivered a quantum efficiency of 50%–55% without any anti-reflection coating.