Study of a 1 eV GaNAsSb photovoltaic cell grown on a silicon substrate
We report the performance of a 1 eV GaNAsSb photovoltaic cell grown on a Si substrate with a SiGe graded buffer grown using molecular beam epitaxy. For comparison, the performance of a similar 1 eV GaN0.018As0.897 Sb 0.085 photovoltaic cell grown on a GaAs substrate was also reported. Both devices w...
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sg-ntu-dr.10356-1030102020-03-07T14:02:44Z Study of a 1 eV GaNAsSb photovoltaic cell grown on a silicon substrate Tan, K. H. Loke, W. K. Wicaksono, S. Li, D. Leong, Y. R. Yoon, S. F. Sharma, P. Milakovich, T. Bulsara, M. T. Fitzgerald, E. A. School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering We report the performance of a 1 eV GaNAsSb photovoltaic cell grown on a Si substrate with a SiGe graded buffer grown using molecular beam epitaxy. For comparison, the performance of a similar 1 eV GaN0.018As0.897 Sb 0.085 photovoltaic cell grown on a GaAs substrate was also reported. Both devices were in situ annealed at 700 °C for 5 min, and a significant performance improvement over our previous result was observed. The device on the GaAs substrate showed a low open circuit voltage (VOC) of 0.42 V and a short circuit current density (JSC) of 23.4 mA/cm2 while the device on the Si substrate showed a VOC of 0.39 V and a JSC of 21.3 mA/cm2. Both devices delivered a quantum efficiency of 50%–55% without any anti-reflection coating. Published version 2014-04-07T03:18:06Z 2019-12-06T21:03:53Z 2014-04-07T03:18:06Z 2019-12-06T21:03:53Z 2014 2014 Journal Article Tan, K. H., Loke, W. K., Wicaksono, S., Li, D., Leong, Y. R., Yoon, S. F., et al. (2014). Study of a 1 eV GaNAsSb photovoltaic cell grown on a silicon substrate. Applied Physics Letters, 104(10), 103906-. https://hdl.handle.net/10356/103010 http://hdl.handle.net/10220/19145 10.1063/1.4867082 en Applied physics letters © 2014 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4867082]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf |
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DRNTU::Engineering::Electrical and electronic engineering Tan, K. H. Loke, W. K. Wicaksono, S. Li, D. Leong, Y. R. Yoon, S. F. Sharma, P. Milakovich, T. Bulsara, M. T. Fitzgerald, E. A. Study of a 1 eV GaNAsSb photovoltaic cell grown on a silicon substrate |
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We report the performance of a 1 eV GaNAsSb photovoltaic cell grown on a Si substrate with a SiGe graded buffer grown using molecular beam epitaxy. For comparison, the performance of a similar 1 eV GaN0.018As0.897 Sb 0.085 photovoltaic cell grown on a GaAs substrate was also reported. Both devices were in situ annealed at 700 °C for 5 min, and a significant performance improvement over our previous result was observed. The device on the GaAs substrate showed a low open circuit voltage (VOC) of 0.42 V and a short circuit current density (JSC) of 23.4 mA/cm2 while the device on the Si substrate showed a VOC of 0.39 V and a JSC of 21.3 mA/cm2. Both devices delivered a quantum efficiency of 50%–55% without any anti-reflection coating. |
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School of Electrical and Electronic Engineering |
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School of Electrical and Electronic Engineering Tan, K. H. Loke, W. K. Wicaksono, S. Li, D. Leong, Y. R. Yoon, S. F. Sharma, P. Milakovich, T. Bulsara, M. T. Fitzgerald, E. A. |
format |
Article |
author |
Tan, K. H. Loke, W. K. Wicaksono, S. Li, D. Leong, Y. R. Yoon, S. F. Sharma, P. Milakovich, T. Bulsara, M. T. Fitzgerald, E. A. |
author_sort |
Tan, K. H. |
title |
Study of a 1 eV GaNAsSb photovoltaic cell grown on a silicon substrate |
title_short |
Study of a 1 eV GaNAsSb photovoltaic cell grown on a silicon substrate |
title_full |
Study of a 1 eV GaNAsSb photovoltaic cell grown on a silicon substrate |
title_fullStr |
Study of a 1 eV GaNAsSb photovoltaic cell grown on a silicon substrate |
title_full_unstemmed |
Study of a 1 eV GaNAsSb photovoltaic cell grown on a silicon substrate |
title_sort |
study of a 1 ev ganassb photovoltaic cell grown on a silicon substrate |
publishDate |
2014 |
url |
https://hdl.handle.net/10356/103010 http://hdl.handle.net/10220/19145 |
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1681047949926203392 |