Study of a 1 eV GaNAsSb photovoltaic cell grown on a silicon substrate
We report the performance of a 1 eV GaNAsSb photovoltaic cell grown on a Si substrate with a SiGe graded buffer grown using molecular beam epitaxy. For comparison, the performance of a similar 1 eV GaN0.018As0.897 Sb 0.085 photovoltaic cell grown on a GaAs substrate was also reported. Both devices w...
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Main Authors: | Tan, K. H., Loke, W. K., Wicaksono, S., Li, D., Leong, Y. R., Yoon, S. F., Sharma, P., Milakovich, T., Bulsara, M. T., Fitzgerald, E. A. |
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Other Authors: | School of Electrical and Electronic Engineering |
Format: | Article |
Language: | English |
Published: |
2014
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/103010 http://hdl.handle.net/10220/19145 |
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Institution: | Nanyang Technological University |
Language: | English |
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