Robust electromigration reliability through engineering optimization
With complex process integration approach and severe fabrication limitations caused by introduction of new materials and diminishing process margins, there are mounting concerns with the increased failure rate at the early life cycle (e.g.<1 year operation) of product application known as infant...
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sg-ntu-dr.10356-1034522020-03-07T14:00:36Z Robust electromigration reliability through engineering optimization Tee, Kheng Chok Ee, Yong Chiang Aubel, Oliver Pey, Kin Leong Ng, Wee Loon Liu, Junfeng Tan, Chuan Seng School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Microelectronics With complex process integration approach and severe fabrication limitations caused by introduction of new materials and diminishing process margins, there are mounting concerns with the increased failure rate at the early life cycle (e.g.<1 year operation) of product application known as infant mortality failures. A paradigm change in reliability qualification methodology aim at understanding the impact of variation on reliability is required to ensure reliability robustness. Using Electromigration (EM) as an example, this paper described a methodology where the impact of process variation on reliability is studied. A model that predicts the impact of process variation on EM sigma is also proposed which enables variation and its impact on reliability to be quantified. Using this methodology, the critical process parameters impacting reliability could be identified and controlled to ensure reliability robustness. Accepted version 2014-12-22T02:39:42Z 2019-12-06T21:12:59Z 2014-12-22T02:39:42Z 2019-12-06T21:12:59Z 2014 2014 Journal Article Ng, W. L., Tee, K. C., Liu, J., Ee, Y. C., Aubel, O., Tan, C. S., et al. (2014). Robust electromigration reliability through engineering optimization. Microelectronics reliability, 54(9-10), 1666-1670. 0026-2714 https://hdl.handle.net/10356/103452 http://hdl.handle.net/10220/24506 10.1016/j.microrel.2014.07.096 en Microelectronics reliability © 2014 Elsevier Ltd. This is the author created version of a work that has been peer reviewed and accepted for publication by Microelectronics Reliability, Elsevier Ltd. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [Article DOI: http://dx.doi.org/10.1016/j.microrel.2014.07.096]. 3 p. application/pdf |
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DRNTU::Engineering::Electrical and electronic engineering::Microelectronics Tee, Kheng Chok Ee, Yong Chiang Aubel, Oliver Pey, Kin Leong Ng, Wee Loon Liu, Junfeng Tan, Chuan Seng Robust electromigration reliability through engineering optimization |
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With complex process integration approach and severe fabrication limitations caused by introduction of new materials and diminishing process margins, there are mounting concerns with the increased failure rate at the early life cycle (e.g.<1 year operation) of product application known as infant mortality failures. A paradigm change in reliability qualification methodology aim at understanding the impact of variation on reliability is required to ensure reliability robustness. Using Electromigration (EM) as an example, this paper described a methodology where the impact of process variation on reliability is studied. A model that predicts the impact of process variation on EM sigma is also proposed which enables variation and its impact on reliability to be quantified. Using this methodology, the critical process parameters impacting reliability could be identified and controlled to ensure reliability robustness. |
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School of Electrical and Electronic Engineering |
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School of Electrical and Electronic Engineering Tee, Kheng Chok Ee, Yong Chiang Aubel, Oliver Pey, Kin Leong Ng, Wee Loon Liu, Junfeng Tan, Chuan Seng |
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Article |
author |
Tee, Kheng Chok Ee, Yong Chiang Aubel, Oliver Pey, Kin Leong Ng, Wee Loon Liu, Junfeng Tan, Chuan Seng |
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Tee, Kheng Chok |
title |
Robust electromigration reliability through engineering optimization |
title_short |
Robust electromigration reliability through engineering optimization |
title_full |
Robust electromigration reliability through engineering optimization |
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Robust electromigration reliability through engineering optimization |
title_full_unstemmed |
Robust electromigration reliability through engineering optimization |
title_sort |
robust electromigration reliability through engineering optimization |
publishDate |
2014 |
url |
https://hdl.handle.net/10356/103452 http://hdl.handle.net/10220/24506 |
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1681038971407171584 |