Role of interfacial layer on complementary resistive switching in the TiN/HfOx/TiN resistive memory device

• Main Authors: Ang, Diing Shenp, Zhang, H. Z., Gu, C. J., Yew, K. S., Wang, X. P., Lo, G. Q.
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2014
• Subjects: DRNTU::Science::Physics
• Online Access: https://hdl.handle.net/10356/103797; http://hdl.handle.net/10220/24557
• Institution: Nanyang Technological University

The role of the bottom interfacial layer (IL) in enabling stable complementary resistive switching (CRS) in the TiN/HfOx/IL/TiN resistive memory device is revealed. Stable CRS is obtained for the TiN/HfOx/IL/TiN device, where a bottom IL comprising Hf and Ti sub-oxides resulted from the oxidation of TiN during the initial stages of atomic-layer deposition of HfOx layer. In the TiN/HfOx/Pt device, where formation of the bottom IL is suppressed by the inert Pt metal, no CRS is observed. Oxygen-ion exchange between IL and the conductive path in HfOx layer is proposed to have caused the complementary bipolar switching behavior observed in the TiN/HfOx/IL/TiN device.